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IOR IRF9130 P-Channel Power MOSFET -100V 11A TO-3 Metal Package

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Overview

The International Rectifier IRF9130 P-Channel MOSFET is a precision power transistor engineered for high-reliability applications in harsh industrial and military environments. Built on HEXFET® technology, this device combines fast switching speeds with low on-resistance for efficient power management in switching regulators, DC-DC converters, motor drivers, and relay control circuits. The hermetically sealed TO-3 metal package provides superior thermal performance and long-term stability.

Key Features

  • Rated for -100V drain-source voltage (P-channel polarity)
  • 11A continuous drain current with 50A pulse capability
  • Low on-resistance (RDS(on)) of 0.30Ω at VGS = -10V
  • Hermetically sealed TO-204AA (modified TO-3) metal package for industrial reliability
  • Single-pulse avalanche rated for transient protection
  • Nanosecond switching speeds minimize energy loss

Technical Specifications

  • Drain-Source Voltage (VDSS): -100V
  • Continuous Drain Current (ID): -11A
  • On-Resistance (RDS(on)): 0.30Ω @ VGS = -10V
  • Threshold Voltage (VGS(th)): -4V (typical)
  • Power Dissipation (PD): 75W @ 25°C
  • Pulse Drain Current (IDM): 50A (single pulse)
  • Junction Temperature Range (TJ): -55°C to +150°C
  • Package: TO-204AA (modified TO-3) metal
  • Technology: HEXFET® power MOSFET

Typical Applications

  • Switching power supplies and DC-DC converters
  • Motor and solenoid drivers in control systems
  • Relay drivers for industrial automation
  • Inverter and UPS circuits
  • Battery charge/discharge control
  • High-reliability military and aerospace electronics

Compatibility & Replacements

Compatible With

  • Linear and switching power supply designs
  • Motor control and PWM driver circuits
  • Industrial automation and PLC relay circuits
  • Battery management and power conversion systems

Replaces / Drop-In Replacement For

  • International Rectifier IRF9130 (original part number)
  • Equivalent TO-3 P-channel MOSFETs with -100V, 11A+ ratings where footprint allows

Works With

  • Standard discrete MOSFET driver circuits (gate drive 0V to -15V)
  • PWM controller ICs and microcontroller gate drivers
  • Thermal management and heatsink mounting systems compatible with TO-3 packages
  • RoHS and military specification manufacturing lines (MIL-PRF-19500)
Manufacturer

International Rectifier (Infineon)

Part Number

IRF9130

Device Type

P-Channel Power MOSFET

Drain-Source Voltage (VDSS)

-100V

Continuous Drain Current (ID)

-11A

Pulse Drain Current (IDM)

50A

On-Resistance (RDS(on))

0.30Ω @ VGS = -10V

Threshold Voltage (VGS(th))

-4V (typical)

Power Dissipation (PD)

75W @ 25°C

Junction Temperature Range

-55°C to +150°C

Package

TO-204AA (modified TO-3) metal

Technology

HEXFET®

Lead Spacing

30mm

Weight

0.012 kg (approx.)

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