Overview
The Maxim DS1230Y-150+ nonvolatile SRAM combines volatile RAM speed with non-volatile storage in a single IC. This 256Kbit memory device features a built-in lithium energy source and control circuitry that automatically protect stored data during power loss. This lot includes 2 units, each offering 32,768 words × 8 bits of addressable memory with 150 ns access time in a 28-pin EDIP package.
Key Features
- 10-year data retention: Minimum data retention guaranteed in the absence of external power
- Automatic power-loss protection: Self-contained lithium source activates when VCC drops below ~3.0V
- Full SRAM functionality: Normal read/write speed with zero standby current requirements
- No external backup circuitry required: Data maintained without additional support components
- Industry-standard pinout: Drop-in replacement for 32k × 8 volatile static RAM architectures
- Lot of 2 units: Cost-effective dual purchase for redundancy or multiple installations
Technical Specifications
- Memory Size: 256Kbit (32K × 8)
- Package Type: 28-pin EDIP (Ceramic DIP)
- Access Time: 150 ns (max)
- Supply Voltage (VCC): 4.5 to 5.5V nominal; write protection by 4.25V
- Data Retention: 10 years minimum (without external power)
- Backup Source: Internal lithium battery
- Operating Temperature: 0°C to 70°C
- Standby Power: Negligible (backed up by internal lithium source)
- Word Width: 8 bits
- Quantity: 2 units per lot
Typical Applications
- Industrial control systems requiring parameter and configuration data preservation across power cycles
- Legacy equipment firmware/BIOS storage where volatile RAM replacement is insufficient
- Embedded systems with critical data logging or alarm history retention
- Test and measurement instruments requiring non-volatile calibration data
- PLC and automation systems using parallel-interface memory modules
- Redundant memory modules in equipment where dual units improve reliability
Compatibility & Replacements
Compatible With
- 5V digital systems with parallel memory interfaces
- Legacy industrial control boards using 28-pin DIP sockets
- VME, CompactPCI, and embedded systems requiring non-volatile storage
- Equipment designed for DS1230 or DS1230Y series memory modules
Replaces / Drop-In Replacement For
- 32k × 8 volatile static RAM (SRAM) in 28-pin DIP format
- Earlier Dallas Semiconductor DS1230AB variants (check pinout compatibility)
- Original DS1230Y-150 units in legacy equipment
Works With
- 5V microcontroller and microprocessor systems
- Parallel address/data bus architectures (16-bit address, 8-bit data)
- Systems requiring chip-enable (CE), write-enable (WE), and output-enable (OE) control signals
- Legacy test equipment and industrial automation platforms from 1990s–2000s era
