NEC 2SC1251 NPN Power Transistor – High-Frequency Amplifier
The NEC 2SC1251 is a high-performance NPN silicon RF power transistor designed for high-linearity Class A amplifiers operating up to 2.0 GHz. This transistor is ideal for applications requiring high gain and low noise characteristics.
Key Features
- High Gain: Offers a minimum gain of 10 dB at 1.0 GHz, ensuring efficient signal amplification.
- Low Noise: Designed to minimize noise, making it suitable for amplifying weak signals in high-frequency applications.
- High Linearity: Ensures accurate signal reproduction without distortion, essential for high-fidelity applications.
- Gold Metallization: Enhances reliability and performance by providing excellent conductivity and resistance to corrosion.
Specifications
- Maximum Collector Current (IC): 300 mA
- Maximum Collector-Base Voltage (VCB): 45 V
- Maximum Power Dissipation (PD): 5.3 W
- Transition Frequency (fT): 1.4 GHz
Applications
The NEC 2SC1251 is commonly used in:
- High-frequency amplifiers
- RF transmitters and receivers
- Communication systems
- Signal processing equipment
Package Details
This product is available in a box containing 30 units, providing ample supply for large-scale projects or inventory replenishment.
For detailed technical information, please refer to the manufacturer’s datasheet.
