Silicon Planar Devices TSOT B712XXX Power Bipolar Transistor 2N5657 (Box of 500)

Silicon Planar Devices TSOT B712XXX Power Bipolar Transistor 2N5657 (Box of 500)

The Silicon Planar Devices TSOT B712XXX Power Bipolar Transistor 2N5657 is a high-voltage NPN transistor designed for efficient power switching and amplification applications. Packaged in a compact TSOT B712XXX form factor, this transistor is ideal for use in output amplifiers, low-current high-voltage converters, and AC line relays.

Key Features

• High Voltage Capability: With a collector-emitter breakdown voltage of 350V, the 2N5657 is suitable for applications requiring substantial voltage handling.
• Moderate Current Handling: Supports a continuous collector current of up to 500mA, making it versatile for various circuit designs.
• Efficient Power Dissipation: Rated for a total power dissipation of 20W, ensuring reliable performance under demanding conditions.
• Compact Package: The TSOT B712XXX package offers a space-saving solution for modern electronic designs.

Technical Specifications

• Transistor Type: NPN
• Collector-Emitter Voltage (V_CEO): 350V
• Collector Current (I_C): 500mA
• Power Dissipation (P_tot): 20W
• Transition Frequency (f_T): 10MHz
• DC Current Gain (h_FE): Minimum of 30 at I_C = 100mA, V_CE = 10V
• Operating Junction Temperature (T_j): Up to 150°C

Package Details

• Package Type: TSOT B712XXX
• Mounting Type: Surface Mount
• Package Quantity: Box of 500 units

This box of 500 Silicon Planar Devices TSOT B712XXX Power Bipolar Transistors 2N5657 provides a reliable and efficient solution for high-voltage switching and amplification needs in various electronic applications.