NEC 2SC1251 NPN Power Transistor – High-Frequency Amplifier The NEC 2SC1251 is a high-performance NPN silicon RF power transistor designed for high-linearity Class A amplifiers operating up to 2.0 GHz. This transistor is ideal for applications requiring high gain and low noise characteristics. Key Features High Gain: Offers a minimum gain of 10 dB at 1.0 GHz, ensuring efficient signal amplification. Low Noise: Designed to minimize noise, making it suitable for amplifying weak signals in high-frequency applications. High Linearity: Ensures accurate signal reproduction without distortion, essential for high-fidelity applications. Gold Metallization: Enhances reliability and performance by providing excellent conductivity and resistance to corrosion. Specifications Maximum Collector Current (I C ): 300 mA Maximum Collector-Base Voltage (V CB ): 45 V Maximum Power Dissipation (P D ): 5.3 W Transition Frequency (f T ): 1.4 GHz Applications The NEC 2SC1251 is commonly used in: High-frequency amplifiers RF transmitters and receivers Communication systems Signal processing equipment Package Details This product is available in a box containing 30 units, providing ample supply for large-scale projects or inventory replenishment. For detailed technical information, please refer to the manufacturer’s datasheet.