IOR IRF9130 P-Channel Power MOSFET -100V 11A TO-3 Metal Package The IOR IRF9130 is a P-Channel Power MOSFET designed for high-performance applications requiring efficient switching and amplification. Encased in a robust TO-3 metal package, this MOSFET offers durability and reliability for demanding environments. Key Features Voltage and Current Ratings: Capable of handling a maximum drain-source voltage (V DSS ) of -100V and a continuous drain current (I D ) of -11A, making it suitable for various power applications. Low On-State Resistance: Features a maximum on-resistance (R DS(on) ) of 0.30 ohms, ensuring minimal power loss and efficient operation. High Power Dissipation: Supports a total power dissipation of up to 75W, allowing it to manage substantial power loads effectively. Hermetically Sealed Package: The TO-3 metal package provides excellent protection against environmental factors, enhancing the component’s longevity and reliability. Dynamic dv/dt Rating: Designed to handle high-speed switching applications with superior reverse energy and diode recovery capabilities. Simple Drive Requirements: Operates with straightforward voltage control, facilitating ease of integration into various circuit designs. Applications The IRF9130 is well-suited for a range of applications, including: Switching power supplies Motor control systems Inverters Choppers Audio amplifiers High-energy pulse circuits Technical Specifications Drain-Source Voltage (V DSS ): -100V Continuous Drain Current (I D ): -11A On-Resistance (R DS(on) ): 0.30 ohms Power Dissipation (P D ): 75W Gate-Source Voltage (V GS ): ±20V Operating Junction Temperature (T J ): -55°C to 150°C With its combination of high voltage and current handling capabilities, low on-resistance, and robust packaging, the IOR IRF9130 P-Channel Power MOSFET is an excellent choice for engineers and designers seeking reliable performance in power management and control applications.