Power Diode H 1N3288

The 1N3288 is a high-current silicon power rectifier diode designed for applications requiring efficient and reliable rectification of high current loads.

Key Features

• High Current Capacity: Capable of handling an average rectified current of 100A, making it suitable for demanding power applications.
• Voltage Ratings: Offers a maximum repetitive peak reverse voltage (VRRM) of 100V, ensuring robust performance in various circuits.
• Low Forward Voltage Drop: Exhibits a forward voltage drop of 1.2V at 200A, enhancing efficiency by minimizing power loss during conduction.
• Stud Mount Package: Encased in a DO-205AA (DO-8) stud mount package, facilitating secure and efficient thermal management.
• Wide Operating Temperature Range: Operates reliably within a junction temperature range of -65°C to 200°C, accommodating diverse environmental conditions.

Applications

The 1N3288 diode is ideal for use in power rectification, freewheeling diodes in motor control circuits, and other high-power industrial applications where efficient current handling and durability are essential.

Specifications

• Manufacturer: Microchip Technology
• Diode Type: Standard
• Voltage – DC Reverse (Vr) (Max): 100 V
• Current – Average Rectified (Io): 100A
• Voltage – Forward (Vf) (Max) @ If: 1.2 V @ 200 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Current – Reverse Leakage @ Vr: 50 µA @ 100 V
• Mounting Type: Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Operating Temperature – Junction: -65°C ~ 200°C

This combination of features makes the 1N3288 a reliable choice for engineers and designers seeking a robust rectifier diode for high-current applications.